PART |
Description |
Maker |
PTFA211801E PTFA211801E-15 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
GTVA261701FA-15 |
Thermally-Enhanced High Power RF GaN HEMT
|
Infineon Technologies A...
|
GTVA221701FA |
Thermally-Enhanced High Power RF GaN HEMT
|
Infineon Technologies A...
|
PTFA080551E PTFA080551F |
Thermally-Enhanced High Power RF LDMOS FETs 55 W, 869 鈥?960 MHz
|
Infineon Technologies AG
|
PTAC210802FCV1R0 |
Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 ?2170 MHz
|
Infineon Technologies A...
|
PTFA260851E PTFA260851F |
Thermally-Enhanced High Power RF LDMOS FET 85 W, 2500 鈥?2700 MHz
|
Infineon Technologies AG
|
PTFA210601E PTFA210601F |
Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 鈥?2170 MHz
|
Infineon Technologies AG
|
PTFA180701E PTFA180701F |
Thermally-Enhanced High Power RF LDMOS FETs 70 W, 1805 鈥?1880 MHz
|
Infineon Technologies AG
|
PTFA192001F PTFA192001E |
Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930-1990 MHz
|
Infineon Technologies AG
|
PTFA241301E PTFA241301F PTFA241301FV1 |
Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420-2480 MHz Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420 ?2480 MHz
|
Infineon Technologies AG Infineon Technologies A...
|
PTVA084007NF |
Thermally-Enhanced High Power RF LDMOS FET 370 W, 48 V, 755 ?805 MHz
|
Cree, Inc
|